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4 Mbit Firmware Hub
SST49LF004B
SST49LF002B / 003B / 004B4Mb Firmware Hub
Preliminary Specifications
FEATURES:
* 4 Mbit SuperFlash memory array for code/data storage - SST49LF004B: 512K x8 (4 Mbit) * Conforms to Intel LPC Interface Specification - Supports Single-Byte Firmware Memory Cycle Type * Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 64 KByte overlay blocks - Chip-Erase for PP Mode Only * Single 3.0-3.6V Read and Write Operations * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption - Active Read Current: 6 mA (typical) - Standby Current: 10 A (typical) * Fast Sector-Erase/Byte-Program Operation - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 s (typical) - Chip Rewrite Time: 8 seconds (typical) - Single-pulse Program or Erase - Internal timing generation * CMOS and PCI I/O Compatibility * Two Operational Modes - Low Pin Count (LPC) interface mode for in-system operation - Parallel Programming (PP) mode for fast production programming * Low Pin Count (LPC) Interface Mode - LPC bus interface supporting byte Read and Write - 33 MHz clock frequency operation - WP# and TBL# pins provide hardware write protect for entire chip and/or top Boot Block - Block Locking Registers for individual block Write-Lock and Lock-Down protection - JEDEC Standard SDP Command Set - Data# Polling and Toggle Bit for End-of-Write detection - 5 GPI pins for system design flexibility - 4 ID pins for multi-chip selection * Parallel Programming (PP) Mode - 11-pin multiplexed address and 8-pin data I/O interface - Supports fast In-System or PROM programming for manufacturing * Packages Available - 32-lead PLCC - 32-lead TSOP (8mm x 14mm) * All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST49LF004B flash memory devices are designed to interface with host controllers (chipsets) that support a lowpin-count (LPC) interface for BIOS applications. The SST49LF004B devices comply with Intel's LPC Interface Specification, supporting single-byte Firmware Memory cycle type. The SST49LF004B devices are backward compatible to the SST49LF004A Firmware Hub. In this document, FWH mode in the SST49LF004A specification is referenced as the Firmware Memory Read/Write cycle. Two interface modes are supported by the SST49LF004B: LPC mode (Firmware Memory cycle types) for in-system operations and Parallel Programming (PP) mode to interface with programming equipment. The SST49LF004B flash memory devices are manufactured with SST's proprietary, high-performance SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain greater reliability and manufacturability compared with alternative approaches. The SST49LF004B devices significantly improve performance
(c)2006 Silicon Storage Technology, Inc. S71307-02-000 2/06 1
and reliability, while lowering power consumption. The SST49LF004B devices write (Program or Erase) with a single 3.0-3.6V power supply. The SST49LF004B use less energy during Erase and Program than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. This means the system software or hardware does not have to be calibrated or correlated to the cumulative number of Erase cycles as is necessary with alternative flash memory technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Intel is a registered trademark of Intel Corporation. These specifications are subject to change without notice.
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications The SST49LF004B devices provide a maximum Byte-Program time of 20 sec. The entire memory can be erased and programmed byte-by-byte typically in 8 seconds for the SST49LF004B device, when using status detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent writes, the SST49LF004B device employ on-chip hardware and software data protection (SDP) schemes. It is offered with a typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. To meet high density, surface mount requirements, the SST49LF004B is offered in both 32-lead PLCC and 32lead TSOP packages. In addition, SST provides lead-free (non-Pb) package options to address the growing need for non-Pb solutions in electronic components. Non-Pb package version can be obtained by ordering products with a package code suffix of "E" as the environmental attribute in the product part number. See Figures 1 and 2 for pin assignments and Table 1 for pin descriptions.
TABLE OF CONTENTS
PRODUCT DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 LIST OF FIGURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 LIST OF TABLES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 FUNCTIONAL BLOCKS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PIN ASSIGNMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 PIN DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Input/Output Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Input Communication Frame. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Interface Mode Select . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Identification Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 General Purpose Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write Protect / Top Block Lock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Row / Column Select . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Output Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Write Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 No Connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DEVICE MEMORY MAP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DESIGN CONSIDERATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 PRODUCT IDENTIFICATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 MODE SELECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
2
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications LPC MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Firmware Memory Read Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Firmware Memory Write Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Abort Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Response to Invalid Fields for Firmware Memory Cycle. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Multiple Device Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PARALLEL PROGRAMMING MODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Device Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Write Operation Status Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Protection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SOFTWARE COMMAND SEQUENCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 ELECTRICAL SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 AC Characteristics (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 AC Characteristics (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 PRODUCT ORDERING INFORMATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 PACKAGING DIAGRAMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
3
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
LIST OF FIGURES
FIGURE 1: Pin Assignments for 32-lead PLCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FIGURE 2: Pin Assignments for 32-lead TSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 FIGURE 3: Device Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 FIGURE 4: Firmware Memory Read Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 FIGURE 5: Firmware Memory Write Cycle Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 FIGURE 6: LCLK Waveform (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 FIGURE 7: Output Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 FIGURE 8: Input Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 FIGURE 9: Reset Timing Diagram (LPC MODE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 FIGURE 10: Reset Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 FIGURE 11: Read Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 FIGURE 12: Write Cycle Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 FIGURE 13: Data# Polling Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 FIGURE 14: Toggle Bit Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 FIGURE 15: Byte-Program Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 FIGURE 16: Sector-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 FIGURE 17: Block-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 FIGURE 18: Chip-Erase Timing Diagram (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 FIGURE 19: Software ID Entry and Read (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 FIGURE 20: Software ID Exit (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 FIGURE 21: AC Input/Output Reference Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 FIGURE 22: A Test Load Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
4
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
LIST OF TABLES
TABLE 1: Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 TABLE 2: Product Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 TABLE 3: Firmware Memory Cycles START Field Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 TABLE 4: Firmware Memory Read Cycle Field Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 TABLE 5: Firmware Memory Write Cycle. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 TABLE 6: Firmware Memory Multiple Device Selection Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 TABLE 7: Block Locking Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 TABLE 8: Block Locking Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 TABLE 9: Operation Modes Selection (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 TABLE 10: Software Command Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 TABLE 11: DC Operating Characteristics (All Interfaces) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 TABLE 12: Recommended System Power-up Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 TABLE 13: Pin Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 TABLE 14: Reliability Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 TABLE 15: Clock Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 TABLE 16: Read/Write Cycle Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 TABLE 17: AC Input/Output Specifications (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 TABLE 18: Interface Measurement Condition Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 TABLE 19: Reset Timing Parameters (LPC Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 TABLE 20: Reset Timing Parameters (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 TABLE 21: Read Cycle Timing Parameters (PP Mode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 TABLE 22: Program/Erase Cycle Timing Parameters (PP Mode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 TABLE 23: Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
5
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
TBL# WP# INIT# X-Decoder LAD[3:0] LCLK LFRAME# ID[3:0] GPI[4:0] R/C# A[10:0] DQ[7:0] OE# WE# Control Logic Programmer Interface I/O Buffers and Data Latches LPC Interface Address Buffers & Latches Y-Decoder SuperFlash Memory
MODE RST#
1307 B1.0
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
6
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
PIN ASSIGNMENTS
RST# (RST#)
VDD (VDD)
R/C# (LCLK)
A8 (GPI2)
A9 (GPI3)
A7(GPI1) A6 (GPI0) A5 (WP#) A4 (TBL#) A3 (ID3) A2 (ID2) A1 (ID1) A0 (ID0) DQ0 (LAD0)
5 6 7 8 9 10 11 12 13
4
3
2
NC
1
32 31 30 29 28 27 26 25 24 23 22
A10 (GPI4)
MODE (MODE) VSS (VSS) NC NC VDD (VDD) OE# (INIT#) WE# (LFRAME#) NC DQ7 (RES)
32-lead PLCC Top View
21 14 15 16 17 18 19 20 DQ4 (RES) DQ5 (RES) DQ1 (LAD1) DQ2 (LAD2) DQ3 (LAD3) DQ6 (RES) VSS (VSS)
( ) Designates LPC Mode
1307 32-plcc P1.0
FIGURE 1: PIN ASSIGNMENTS FOR 32-LEAD PLCC
NC NC NC VSS (VSS) MODE (MODE) A10 (FGPI4) R/C# (CLK) VDD (VDD) NC RST# (RST#) A9 (FGPI3) A8 (FGPI2) A7 (FGPI1) A6 (FGPI0) A5 (WP#) A4 (TBL#)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Standard Pinout Top View Die Up
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
1307 32-tsop WH P1.0
OE# (INIT#) WE# (LFRAME#) VDD (VDD) DQ7 (RES) DQ6 (RES) DQ5 (RES) DQ4 (RES) DQ3 (LAD3) VSS (VSS) DQ2 (LAD2) DQ1 (LAD1) DQ0 (LAD0) A0 (ID0) A1 (ID1) A2 (ID2) A3 (ID3)
( ) Designates LPC Mode
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
7
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
PIN DESCRIPTIONS
TABLE 1: PIN DESCRIPTION
Interface Symbol LCLK LAD[3:0] Pin Name Clock Address and Data Type1 I I/O I I X PP LPC X X X X Functions
To provide a clock input to the control unit. The clock conforms to the PCI specification. To provide LPC bus information such as addresses and command inputs/outputs to memory. To indicate start of a data transfer operation; also used to abort an LPC cycle in progress. This pin determines which interface is operational. When held high, programmer mode is enabled and when held low, LPC mode is enabled. This pin must be set at power-up or before returning from reset and must not change during device operation. This pin must be held high (VIH) for PP mode and low (VIL) for LPC mode. This pin is internally pulled-down with a resistor between 20-100 K. To reset the operation of the device This is the second reset pin for in-system use. This pin functions identically to RST#. These four pins are part of the mechanism that allows multiple parts to be attached to the same bus. The strapping of these pins is used to identify the component. The boot device must have ID[3:0]=0000, all subsequent devices should use sequential count-up strapping. These pins are internally pulled-down with a resistor between 20-100 K. These individual inputs can be used for additional board flexibility. The state of these pins can be read through GPI_REG (General Purpose Inputs Register). These inputs should be at their desired state before the start of the LPC clock cycle during which the read is attempted, and should remain in place until the end of the Read cycle. Unused GPI pins must not be floated. When low, prevents programming to the boot block sectors at the top of the device memory. When TBL# is high it disables hardware write protection for the top block sectors. This pin cannot be left unconnected. When low, prevents programming to all but the highest addressable blocks. When WP# is high it disables hardware write protection for these blocks. This pin cannot be left unconnected. Select for the Programming interface, this pin determines whether the address pins are pointing to the row addresses, or to the column addresses. Inputs for low-order addresses during Read and Write operations. Addresses are internally latched during a Write cycle. For the programming interface, these addresses are latched by R/C# and share the same pins as the high-order address inputs. To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# is high. To gate the data output buffers. To control the Write operations.
LFRAME# Frame MODE Interface Mode Select
RST# INIT# ID[3:0]
Reset Initialize Identification Inputs
I I I
X
X X X
GPI[4:0]
General Purpose Inputs
I
X
TBL#
Top Block Lock
I
X
WP#
Write Protect
I
X
R/C# A10-A0
Row/Column Select Address
I I
X X
DQ7-DQ0
Data
I/O
X
OE# WE# RES VDD VSS NC
Output Enable Write Enable Reserved Power Supply Ground No Connection
I I PWR PWR
X X X X X N/A X X N/A
These pins must be left unconnected. To provide power supply (3.0-3.6V) Circuit ground (0V reference) Unconnected pins.
T1.2 1307
1. I = Input, O = Output
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
8
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Clock
The LCLK pin accepts a clock input from the host controller.
General Purpose Inputs
The General Purpose Inputs (GPI[4:0]) can be used as digital inputs for the CPU to read. The GPI register holds the values on these pins. The data on the GPI pins must be stable before the start of a GPI register Read and remain stable until the Read cycle is complete. The pins must be driven low, VIL, or high, VIH but not left unconnected (float).
Input/Output Communications
The LAD[3:0] pins are used to serially communicate cycle information such as cycle type, cycle direction, ID selection, address, data, and sync fields.
Input Communication Frame
The LFRAME# pin is used to indicate start of a LPC bus cycle. The pin is also used to abort an LPC bus cycle in progress.
Write Protect / Top Block Lock
The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of device memory in the SST49LF004B. The TBL# pin is used to write protect 16 boot sectors (64 KByte) at the highest memory address range for the SST49LF004B. The WP# pin write protects the remaining sectors in the flash memory. An active low signal at the TBL# pin prevents Program and Erase operations of the top boot block. When TBL# pin is held high, the hardware write protection of the top boot block is disabled. The WP# pin serves the same function for the remaining blocks of the device memory. The TBL# and WP# pins write protection functions operate independently of one another. Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or Erase operation. A logic level change occurring at the TBL# or WP# pin during a Program or Erase operation could cause unpredictable results.
Interface Mode Select
The MODE pin is used to set the interface mode. If the mode pin is set to logic high, the device is in PP mode. If the mode pin is set low, the device is in the LPC mode. The mode selection pin must be configured prior to device operation. The mode pin is internally pulled down if the pin is left unconnected.
Reset
A VIL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function internally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initialization. During a Read operation, driving INIT# or RST# pins low deselects the device and places the output drivers, LAD[3:0], in a high impedance state. The reset signal must be held low for a minimum of time TRSTP A reset latency occurs if a reset pro. cedure is performed during a Program or Erase operation. See Tables 19 and 20, Reset Timing Parameters, for more information. A device reset during an active Program or Erase operation will abort the operation and memory contents may become invalid due to data being altered or corrupted from an incomplete Erase or Program operation.
Row / Column Select
The R/C# pin is used to control the multiplex address inputs in Parallel Programming (PP) mode. The column addresses are mapped to the higher internal address (A18-11), and the row addresses are mapped to the lower internal addresses (A10-0).
Output Enable
The OE# pin is used to gate the output data buffers in PP mode.
Identification Inputs
These pins are part of a mechanism that allows multiple devices to be attached to the same bus. The strapping of these pins is used to identify the component. The boot device must have ID[3:0] = 0; all subsequent devices should use sequential count-up strapping. These pins are internally pulled-down with a resistor between 20-100 K.
Write Enable
The WE# pin is used to control the write operations in PP mode.
No Connection
These pins are not connected internally.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
9
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
DEVICE MEMORY MAP
TBL#
7FFFFH Block 7 70000H 6FFFFH Block 6 60000H 5FFFFH Block 5 50000H 4FFFFH Block 4 40000H 3FFFFH Block 3
Boot Block
WP# Block 0-6
30000H 2FFFFH Block 2 20000H 1FFFFH Block 1 10000H 0F000H Block 0 (64 KByte) 02000H 01000H 00000H
4 KByte Sector 2 4 KByte Sector 1 4 KByte Sector 0
1307 F02.0
FIGURE 3: DEVICE MEMORY MAP
DESIGN CONSIDERATIONS
SST recommends a high frequency 0.1 F ceramic capacitor to be placed as close as possible between VDD and VSS less than 1 cm away from the VDD pin of the device. Additionally, a low frequency 4.7 F electrolytic capacitor from VDD to VSS should be placed within 1 cm of the VDD pin. If a socket is used for programming purposes, an additional 1-10 F should be added next to each socket. The RST# and INIT# pins must remain stable at VIH for the entire duration of an Erase or Program operation. WP# must remain stable at VIH for the entire duration of the Erase and Program operations for non-Boot Block sectors. To write data to the top Boot Block sectors, the TBL# pin must also remain stable at VIH for the entire duration of the Erase and Program operations.
PRODUCT IDENTIFICATION
The Product Identification mode identifies the device as the SST49LF004B and manufacturer as SST. TABLE 2: PRODUCT IDENTIFICATION
Address PP Mode Manufacturer's ID Device ID2 0001H FFBC 0001H 60H
T2.0 1307
Data Mode1 BFH
LPC
0000H
FFBC 0000H
SST49LF004B
1. Address shown in this column is for boot device only. Address locations should appear elsewhere in the 4 GByte system memory map depending on ID strapping values on ID[3:0] pins when multiple LPC memory devices are used in a system. 2. The device ID for SST49LF004B is the same as SST49LF004A.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
10
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
MODE SELECTION
The SST49LF004B flash memory device operates in two distinct interface modes: the LPC mode and the Parallel Programming (PP) mode. The MODE (Interface Mode Select) pin is used to set the interface mode selection. If the MODE pin is set to logic high, the device is in PP mode; while if the MODE pin is set low, the device is in LPC mode. The MODE selection pin must be configured prior to device operation and must not change during operation. If the pin is not connected, by default the Mode pin is internally pulled low and the 49LF00xB will be in LPC operation. In LPC mode, communication between the Host and the SST49LF004B occurs via the 4-bit I/O communication signals, LAD[3:0] and LFRAME#. The SST49LF004B detects whether it is being accessed via a FWH Read or FWH Write cycle by detecting the START field contents; 91101b is a FWH read cycle and a 1110b indicates a FWH Write cycle. In PP mode, the device is controlled via the 11 addresses, A10-A0, and 8 I/O, DQ7-DQ0, signals. The address inputs are multiplexed in row and column selected by control signal R/C# pin. The row addresses are mapped to the lower internal addresses (A10-0), and the column addresses are mapped to the higher internal addresses (A18-11). See Figure 3, Device Memory Map, for address assignments.
LPC MODE Device Operation
The LPC mode uses a 5-signal communication interface consisting of one control line, LFRAME#, which is driven by the host to start or abort a bus cycle, and a 4-bit data bus, LAD[3:0], which is used to communicate cycle type, cycle direction, ID selection, address, data and sync fields. The device enters standby mode when LFRAME# is high and no internal operation is in progress. The SST49LF004B supports single-byte Firmware Memory Read/Write cycles as defined in Intel's Low-Pin-Count Interface Specification. The host drives LFRAME# low for one or more clock cycles to initiate an LPC cycle. The last latched value of LAD[3:0] before LFRAME# is the START value. The START value determines whether the SST49LF004B will respond to a Firmware Memory Read or Firmware Memory Write cycle as defined in Table 3. TABLE 3: FIRMWARE MEMORY CYCLES START FIELD DEFINITION
START Value Definition 1101 1110 Start of a Firmware Memory Read cycle Start of a Firmware Memory Write cycle
T3.0 1307
See following sections for details of Firmware Memory cycle types. JEDEC standard SDP (Software Data Protection) Program and Erase command sequences are used to initiate Firmware Memory Program and Erase operations. See Table 9 for a listing of Program and Erase commands. Chip-Erase is only available in PP mode.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
11
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Firmware Memory Read Cycle
TABLE 4: FIRMWARE MEMORY READ CYCLE FIELD DEFINITIONS
Clock Cycle 1 Field Name START Field Contents LAD[3:0]1 1101 LAD[3:0] Direction IN Comments LFRAME# must be active (low) for the device to respond. Only the last field latched before LFRAME# transitions high will be recognized. The START field contents (1101b) indicate a Firmware Memory Read cycle. Indicates which SST49LF004B device should respond. If the IDSEL (ID select) field matches the value of ID[3:0], the device will respond to the LPC bus cycle. These seven clock cycles make up the 28-bit memory address. YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble first. The MSIZE field indicates how many bytes will be transferred during multi-byte operations. The SST49LF004B only supports single-byte operation. MSIZE=0000b In this clock cycle, the master has driven the bus to all `1's and then floats the bus, prior to the next clock cycle. This is the first part of the bus "turnaround cycle." The SST49LF004B takes control of the bus during this cycle. During this clock cycle, the device generates a "ready sync" (RSYNC) indicating that the device has received the input data. ZZZZ is the least-significant nibble of the data byte. ZZZZ is the most-significant nibble of the data byte. In this clock cycle, the SST49LF004B drives the bus to all ones and then floats the bus prior to the next clock cycle. This is the first part of the bus "turnaround cycle." The host resumes control of the bus during this cycle.
T4.1 1307
2
IDSEL
0000 to 1111
IN
3-9
MADDR
YYYY
IN
10
MSIZE
0000 (1 Byte)
IN
11
TAR0
1111
IN then Float
12 13
TAR1 RSYNC
1111 (float) 0000 (READY)
Float then OUT OUT
14 15 16
DATA DATA TAR0
ZZZZ ZZZZ 1111
OUT OUT OUT then Float Float then IN
17
TAR1
1111 (float)
1. Field contents are valid on the rising edge of the present clock cycle.
LCLK
LFRAME#
Start IDSEL 0000b MADDR A[27:24] A[23:20] A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] MSIZE 0000b TAR0 1111b TAR1 Tri-State RSYNC 0000b DATA D[3:0] D[7:4] TAR
LAD[3:0]
1101b
1307 F03.0
FIGURE 4: FIRMWARE MEMORY READ CYCLE WAVEFORM
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
12
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Firmware Memory Write Cycle
TABLE 5: FIRMWARE MEMORY WRITE CYCLE
Clock Cycle 1 Field Name START Field Contents LAD[3:0]1 1110 LAD[3:0] Direction IN Comments LFRAME# must be active (low) for the device to respond. Only the last field latched before LFRAME# transitions high will be recognized. The START field contents (1110b) indicate a Firmware Memory Write cycle. Indicates which SST49LF004B device should respond. If the IDSEL (ID select) field matches the value of ID[3:0], the device will respond to the memory cycle. These seven clock cycles make up the 28-bit memory address. YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble first. The MSIZE field indicates how many bytes will be transferred during multi-byte operations. The device only supports single-byte writes. MSIZE=0000b ZZZZ is the least-significant nibble of the data byte. ZZZZ is the most-significant nibble of the data byte. In this clock cycle, the host drives the bus to all '1's and then floats the bus prior to the next clock cycle. This is the first part of the bus "turnaround cycle." The SST49LF004B takes control of the bus during this cycle. During this clock cycle, the device generates a "ready sync" (RSYNC) indicating that the device has received the input data. In this clock cycle, the SST49LF004B drives the bus to all '1's and then floats the bus prior to the next clock cycle. This is the first part of the bus "turnaround cycle." The host resumes control of the bus during this cycle.
T5.0 1307
2
IDSEL
0000 to 1111
IN
3-9
MADDR
YYYY
IN
10
MSIZE
0000 (1 Byte)
IN
11 12 13
DATA DATA TAR0
ZZZZ ZZZZ 1111
IN IN IN then Float
14 15
TAR1 RSYNC
1111 (float) 0000
Float then OUT OUT
16
TAR0
1111
OUT then Float
17
TAR1
1111 (float)
Float then IN
1. Field contents are valid on the rising edge of the present clock cycle.
LCLK
LFRAME#
Start IDSEL 0000b MADDR A[27:24] A[23:20] A[19:16] A[15:12] A[11:8] A[7:4] A[3:0] MSIZE 0000b DATA D[3:0] D[7:4] TAR0 1111b TAR1 Tri-State RSYNC 0000b TAR
LAD[3:0]
1110b
1307 F04.0
FIGURE 5: FIRMWARE MEMORY WRITE CYCLE WAVEFORM
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
13
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Abort Mechanism
If LFRAME# is driven low for one or more clock cycles after the start of a bus cycle, the cycle will be terminated. The host may drive LAD[3:0] with '1111b' (ABORT nibble) to return the interface to ready mode. The ABORT only affects the current bus cycle. For a multi-cycle command sequence, such as the Erase or Program SDP commands, ABORT doesn't interrupt the entire command sequence, only the current bus cycle of the command sequence. The host can re-send the bus cycle for the aborted command and continue the SDP command sequence after the device is ready again.
Multiple Device Selection
Multiple LPC flash devices may be strapped to increase memory densities in a system. The four ID pins, ID[3:0], allow up to 16 devices to be attached to the same bus by using different ID strapping in a system. BIOS support, bus loading, or the attaching bridge may limit this number. The boot device must have an ID of 0000b (determined by ID[3:0]); subsequent devices use incremental numbering. Equal density must be used with multiple devices. Multiple Device Selection for Firmware Memory Cycle For Firmware Memory Read/Write cycles, hardware strapping values on ID[3:0] must match the values in IDSEL field. See Table 6 for multiple device selection configurations. The SST49LF004B will compare the IDSEL field with ID[3:0]'s strapping values. If there is a mismatch, the device will ignore the reminder of the cycle. TABLE 6: FIRMWARE MEMORY MULTIPLE DEVICE SELECTION CONFIGURATION
Device # 0 (Boot device) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ID[3:0] 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 IDSEL 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111
T6.0 1307
Response to Invalid Fields for Firmware Memory Cycle
During LPC operations the SST49LF004B will not explicitly indicate that it has received invalid field sequences. The response to specific invalid fields or sequences is as follows: ID mismatch: If the IDSEL field does not match ID[3:0], the device will ignore the cycle. See Multiple Device Selection section for details. Address out of range: The address sequence is 7 fields long (28 bits) for Firmware Memory bus cycles, but only A22 and A18:A0 will be decoded by SST49LF004B. Address A22 has the special function of directing reads and writes to the flash core (A22=1) or to the register space (A22=0). Invalid MSIZE field If the device receives an invalid MSIZE field during a Firmware Memory Read or Write cycle, the cycle will be ignored and no operation will be attempted. The SST49LF004B will not generate any kind of response in this situation. Invalid size fields for a Firmware Memory cycle are any data other than 0000b. Once valid START, IDSEL, and MSIZE fields are received, the SST49LF004B will always complete the bus cycle. However, if the device is busy performing a flash Erase or Program operation, no new Write command (memory write or register write) will be executed.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
14
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Write Operation Status Detection
The SST49LF004B device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling, DQ7, and Toggle Bit, DQ6. The End-of-Write detection mode is incorporated into the Firmware Memory Read cycles. The actual completion of the nonvolatile write is asynchronous with the system. Therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Data# Polling When the SST49LF004B device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid. Valid data will appear on the entire data bus in subsequent successive Read cycles after an interval of 1 s. During an internal Erase operation, any attempt to read DQ7 will produce a '0'. Once the internal Erase operation is completed, DQ7 will produce a '1'. Proper status will not be given using Data# Polling if the address is in the invalid range. Toggle Bit During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. Note that even though DQ6 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid. Valid data will appear on the entire data bus in subsequent successive Read cycles after an interval of 1 s. Proper status will not be given using Toggle Bit if the address is in the invalid range.
Registers
There are three types of registers available on the SST49LF004B, the General Purpose Inputs register, Block Locking registers, and the JEDEC ID registers. These registers appear at their respective address location in the 4 GByte system memory map. Unused register locations will read as 00H. Any attempt to read or write any register during an internal Write operation will be ignored. General Purpose Inputs Register The GPI_REG (General Purpose Inputs Register) passes the state of GPI[4:0] to the outputs. It is recommended that the GPI[4:0] pins are in the desired state before LFRAME# is brought low for the beginning of the bus cycle, and remain in that state until the end of the cycle. There is no default value since this is a pass-through register. The GPI register for the boot device appears at FFBC0100H in the 4 GByte system memory map, and will appear elsewhere if the device is not the boot device. The register is not available to be read when the device is in Erase/Program operation. Block Locking Registers SST49LF004B provides software controlled lock protection through a set of Block Locking registers. The Block Locking registers are Read/Write registers and are accessible through standard addressable memory locations specified in Table 7 for boot device. These registers will appear elsewhere if the device is not the boot device. Unused register locations will read as 00H. Write Lock: The Write-Lock bit, bit 0, controls the lock state. The default Write status of all blocks after power up is write locked. When bit 0 of the Block Locking register is set, Program and Erase operations for the corresponding block are prevented. Clearing the Write-Lock bit will unprotect the block. The Write-Lock bit must be cleared prior to starting a Program or Erase operation since it is sampled at the beginning of the operation. The Write-Lock bit functions in conjunction with the hardware Write Lock pin TBL# for the top Boot Block. When TBL# is low, it overrides the software locking scheme. The top Boot Block Locking register does not indicate the state of the TBL# pin. The Write-Lock bit functions in conjunction with the hardware WP# pin for blocks 0 to 6. When WP# is low, it overrides the software locking scheme. The Block Locking registers do not indicate the state of the WP# pin.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
15
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications Lock Down: The Lock-Down bit, bit 1, controls the Block Locking registers. The default Lock Down status of all blocks upon power-up is not locked down. Once the Lock-Down bit is set, any future attempted changes to that Block Locking register will be ignored. The LockDown bit is only cleared upon a device reset with RST# or TABLE 7: BLOCK LOCKING REGISTERS1
Register T_BLOCK_LK T_MINUS01_LK T_MINUS02_LK T_MINUS03_LK T_MINUS04_LK T_MINUS05_LK T_MINUS06_LK T_MINUS07_LK
1. Default value at power up is 01H
INIT# or power down. Current Lock Down status of a particular block can be determined by reading the corresponding Lock-Down bit. Once the Lock-Down bit of a block is set, the Write-Lock bits for that block can no longer be modified, and the block is locked down in its current state of write accessibility.
Block Size 64K 64K 64K 64K 64K 64K 64K 64K
Protected Memory Address Range 07FFFFH - 070000H 06FFFFH - 060000H 05FFFFH - 050000H 04FFFFH - 040000H 03FFFFH - 030000H 02FFFFH - 020000H 01FFFFH - 010000H 00FFFFH - 000000H
Memory Map Register Address FFBF0002H FFBE0002H FFBD0002H FFBC0002H FFBB0002H FFBA0002H FFB90002H FFB80002H
T7.0 1307
TABLE 8: BLOCK LOCKING REGISTER BITS
Reserved Bit [7..2] 000000 000000 000000 000000 Lock-Down Bit [1] 0 0 1 1 Write-Lock Bit [0] 0 1 0 1 Lock Status Full Access Write Locked (Default State at Power-Up) Locked Open (Full Access Locked Down) Write Locked Down
T8.0 1307
JEDEC ID Registers The JEDEC ID registers provide access to the manufacturer and device ID information with a single Read cycle. The JEDEC ID registers for the boot device appear at FFBC0000H and FFBC0001H in the 4 GByte system memory map, and will appear elsewhere if the device is not the boot device. Registers are not available for read when the device is in Erase/Program operation. Unused register location will read as 00H. Refer to Table 2 for product identification information.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
16
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
PARALLEL PROGRAMMING MODE Device Operation
Commands are used to initiate the memory operation functions of the device. The data portion of the software command sequence is latched on the rising edge of WE#. During the software command sequence the row address is latched on the falling edge of R/C# and the column address is latched on the rising edge of R/C#. Read The Read operation of the SST49LF004B device is controlled by OE#. OE# is the output control and is used to gate data from the output pins. Refer to the Read cycle timing diagram, Figure 11, for further details. Reset A VIL on RST# pin initiates a device reset. Byte-Program Operation The SST49LF004B device is programmed on a byte-bybyte basis. Before programming, one must ensure that the byte that is being programmed is fully erased. The ByteProgram operation is initiated by executing a four-byte command load sequence for Software Data Protection with address (PA) and data in the last bus cycle. During the Byte-Program operation, the row address (A10-A0) is latched on the falling edge of R/C# and the column Address (A21-A11) is latched on the rising edge of R/C#. The data bus is latched on the rising edge of WE#. The Program operation, once initiated, will be completed, within 20 s. See Figure 15 for timing waveforms. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The SectorErase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 16 for Sector-Erase timing waveforms. Any commands written during the Sector-Erase operation will be ignored. Block-Erase Operation The Block-Erase operation allows the system to erase the device in any of the 8 uniform 64 KByte blocks for the SST49LF004B. The Block-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Block-Erase command (50H) and block address (BA) in the last bus cycle. The internal BlockErase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 17 for timing waveforms. Any commands written during the Block- Erase operation will be ignored. Chip-Erase Operation The SST49LF004B device provides a Chip-Erase operation only in PP mode, which allows the user to erase the entire memory array to the '1's state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a sixbyte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last bus cycle. The internal Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the only valid reads are Toggle Bit or Data# Polling. See Table 10 for the command sequence, Figure 18 for timing diagram. Any commands written during the ChipErase operation will be ignored.
Write Operation Status Detection
The SST49LF004B device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling DQ7 and Toggle Bit DQ6. The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, the device has completed the Write cycle, otherwise the rejection is valid.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
2/06
17
4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications TABLE 9: OPERATION MODES SELECTION (PP MODE)
Mode Read Program Erase Reset Write Inhibit Product Identification RST# OE# VIL WE# DQ DOUT DIN X1 High Z High Z/DOUT Manufacturer's ID (BFH) Device ID2 Address AIN AIN Sector or Block address, XXH for Chip-Erase X X A18 - A1 = VIL, A0 = VIL A18 - A1 = VIL, A0 = VIH
T9.0 1307
VIH VIH VIH
VIL
VIH
VIL VIL X
VIH VIH
X VIL VIL
VIH VIH
VIH VIH
1. X can be VIL or VIH, but no other value. 2. Device ID = 60H for SST49LF004B
Data# Polling DQ7 When the SST49LF004B device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid. Valid data will appear on the entire data bus in subsequent successive Read cycles after an interval of 1 s. During an internal Erase operation, any attempt to read DQ7 will produce a '0'. Once the internal Erase operation is completed, DQ7 will produce a '1'. Data# Polling is valid after the rising edge of the fourth WE# pulse for the Program operation. For Sector-Erase, BlockErase, or Chip-Erase, the Data# Polling is valid after the rising edge of the sixth WE# pulse. See Figure 13 for Data# Polling timing diagram. Proper status will not be given using Data# Polling if the address is in the invalid range. Toggle Bit DQ6 During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating '0's and '1's, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of the fourth WE# pulse for Program operation. For Sector-Erase, BlockErase or Chip-Erase, the Toggle Bit is valid after the rising edge of the sixth WE# pulse. See Figure 14 for Toggle Bit timing diagram.
Data Protection (PP Mode)
The SST49LF004B device provides both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Software Data Protection (SDP) The SST49LF004B provides the JEDEC approved Software Data Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power down. Any Erase operation requires the inclusion of a five-byte load sequence.
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
SOFTWARE COMMAND SEQUENCE
TABLE 10: SOFTWARE COMMAND SEQUENCE
Command Sequence Byte-Program Sector-Erase Block-Erase Chip-Erase6 Software ID Entry7,8 Software ID Exit9 Software ID Exit9 1st1 Cycle
Addr2
YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H
2nd1 Cycle
Data
AAH AAH AAH AAH AAH
3rd1 Cycle
Data
55H 55H 55H 55H 55H
4th1 Cycle
Data
A0H 80H 80H 80H 90H
5th1 Cycle
Data
Data AAH AAH AAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH 55H 55H 55H
6th1 Cycle
Data Addr2
SAX4 BAX5 YYYY 5555H
Addr2
YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH YYYY 2AAAH
Addr2
YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H YYYY 5555H
Addr2
PA3 YYYY 5555H YYYY 5555H YYYY 5555H Read ID
Addr2
Data
30H 50H 10H
XXXX XXXXH
F0H
YYYY 5555H
AAH
YYYY 2AAAH
55H
YYYY 5555H
F0H
T10.0 1307
1. LPC mode use consecutive Write cycles to complete a command sequence; PP mode use consecutive bus cycles to complete a command sequence. 2. YYYY = A[31:16]. In LPC mode, during SDP command sequence, YYYY must be within valid memory address range, see Address out of range section for details. In PP mode, YYYY can be VIL or VIH, but no other value. 3. PA = Program Byte address 4. SAX for Sector-Erase Address 5. BAX for Block-Erase Address 6. Chip-Erase is supported in PP mode only 7. SST Manufacturer's ID = BFH, is read with A18-A0 = 0. With A18-A1 = 0; 49LF004B Device ID = 60H, is read with A0 = 1. 8. The device does not remain in Software Product ID mode if powered down. 9. Both Software ID Exit operations are equivalent
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the LPC interface signals (LA0[3:0], LFRAME, LCLCK and RST#) are defined in Section 4.2.2.4 of the PCI local bus specification, Rev. 2.1. Refer to Table 11 for the DC voltage and current specifications. Refer to Tables 16 through 22 for the AC timing specifications for Clock, Read, Write, and Reset operations. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D.C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA=25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Output Short Circuit Current3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Do not violate processor or chipset limitations on the INIT# pin 2. Excluding certain with-Pb 32-PLCC units, all packages are 260C capable in both non-Pb and with-Pb solder versions. Certain with-Pb 32-PLCC package types are capable of 240C for 10 seconds; please consult the factory for the latest information. 3. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range Commercial Ambient Temp 0C to +85C VDD 3.0-3.6V
AC CONDITIONS OF TEST1
Input Rise/Fall Time . . . . . . . . . . . . . . . 3 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 21 and 22
1. LPC interface signals use PCI load test condition
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
DC Characteristics
TABLE 11: DC OPERATING CHARACTERISTICS (ALL INTERFACES)
Limits Symbol Parameter IDD1 Active VDD Current Min Max Units Test Conditions LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP mode) All other inputs=VIL or VIH 12 30 100 mA mA A All outputs = open, VDD=VDD Max See Note 2 LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP mode) LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD, VDD=VDD Max, All other inputs 0.9 VDD or 0.1 VDD LCLK (LPC mode) and Address Input (PP mode)=VILT/VIHT at f=33 MHz (LPC mode) or 1/TRC min (PP mode) LFRAME#=VIL, f=33 MHz, VDD=VDD Max All other inputs 0.9 VDD or 0.1 VDD VIN=GND to VDD, VDD=VDD Max
Read Write2 ISB Standby VDD Current (LPC Interface)
IRY3
Input Current for Mode and ID[3:0] pins Input Leakage Current for Mode and ID[3:0] pins Input Leakage Current Output Leakage Current INIT# Input High Voltage INIT# Input Low Voltage Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 0.9 VDD 1.1 -0.5 -0.5 0.5 VDD
10
mA
II
200
A
ILI ILO VIHI VILI VIL
1 1 VDD+0.5 0.4 0.3 VDD VDD+0.5 0.1 VDD
A A V V V V V V
VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Max VDD=VDD Min VDD=VDD Min VDD=VDD Max
VIH
VOL VOH
T11.0 1307
1. IDD active while a Read or Write (Program or Erase) operation is in progress. 2. For PP mode: OE# = WE# = VIH; For LPC mode: f = 1/TRC min, LFRAME# = VIH. 3. The device is in Ready mode when no activity is on the LPC bus.
TABLE 12: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol TPU-READ1 TPU-WRITE
1
Parameter Power-up to Read Operation Power-up to Write Operation
Minimum 100 100
Units s s
T12.0 1307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
TABLE 13: PIN CAPACITANCE (VDD=3.3V, TA=25 C, f=1 Mhz, other pins open)
Parameter CI/O
1
Description I/O Pin Capacitance Input Capacitance
Test Condition VI/O=0V VIN=0V
Maximum 12 pF 12 pF
T13.0 1307
CIN1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications TABLE 14: RELIABILITY CHARACTERISTICS
Symbol NEND1 TDR
1
Parameter Endurance Data Retention Latch Up
Minimum Specification 10,000 100 100 + IDD
Units Cycles Years mA
Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78
T14.0 1307
ILTH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 15: CLOCK TIMING PARAMETERS (LPC MODE)
Symbol TCYC THIGH TLOW Parameter LCLK Cycle Time LCLK High Time LCLK Low Time LCLK Slew Rate (peak-to-peak) RST# or INIT# Slew Rate Min 30 11 11 1 50 4 Max Units ns ns ns V/ns mV/ns
T15.0 1307
Tcyc Thigh 0.6 VDD Tlow 0.5 VDD 0.4 VDD 0.3 VDD 0.2 VDD
1307 F05.0
0.4 VDD p-to-p (minimum)
FIGURE 6: LCLK WAVEFORM (LPC MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
AC Characteristics (LPC Mode)
TABLE 16: READ/WRITE CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (LPC MODE)
Symbol TCYC TSU TDH TVAL1 TBP TSE TBE TON TOFF Parameter Clock Cycle Time Data Set Up Time to Clock Rising Clock Rising to Data Hold Time Clock Rising to Data Valid Byte Programming Time Sector-Erase Time Block-Erase Time Clock Rising to Active (Float to Active Delay) Clock Rising to Inactive (Active to Float Delay) 2 28 Min 30 7 0 2 11 20 25 25 Max Units ns ns ns ns s ms ms ns ns
T16.0 1307
1. Minimum and maximum times have different loads. See PCI spec
TABLE 17: AC INPUT/OUTPUT SPECIFICATIONS (LPC MODE)
Symbol IOH(AC) Parameter Switching Current High Min -12 VDD -17.1(VDD-VOUT) Equation C1 (Test Point) IOL(AC) Switching Current Low 16 VDD 26.7 VOUT -32 VDD Equation D1 mA mA mA mA mA mA 4 4 V/ns V/ns Max Units Conditions mA mA 0 < VOUT 0.3VDD 0.3VDD < VOUT < 0.9VDD 0.7VDD < VOUT < VDD VOUT = 0.7VDD VDD >VOUT 0.6VDD 0.6VDD > VOUT > 0.1VDD 0.18VDD > VOUT > 0 VOUT = 0.18VDD -3 < VIN -1 VDD+4 > VIN VDD+1 0.2VDD-0.6VDD load 0.6VDD-0.2VDD load
T17.0 1307
(Test Point) ICL ICH slewr slewf Low Clamp Current High Clamp Current Output Rise Slew Rate Output Fall Slew Rate -25+(VIN+1)/0.015 25+(VIN-VDD-1)/0.015 1 1
38 VDD
1. See PCI spec.
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
VTH LCLK VTEST VTL TVAL LAD [3:0] (Valid Output Data)
LAD [3:0] (Float Output Data)
TON TOFF
1307 F06.0
FIGURE 7: OUTPUT TIMING PARAMETERS (LPC MODE)
VTH LCLK TSU TDH LAD [3:0] (Valid Input Data) Inputs Valid VTEST VTL
VMAX
1307 F07.0
FIGURE 8: INPUT TIMING PARAMETERS (LPC MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications TABLE 18: INTERFACE MEASUREMENT CONDITION PARAMETERS (LPC MODE)
Symbol VTH1 VTL
1
Value 0.6 VDD 0.2 VDD 0.4 VDD 0.4 VDD 1
Units V V V V V/ns
T18.0 1307
VTEST VMAX
1
Input Signal Edge Rate
1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met with no more overdrive than this. VMAX specifies the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may use different voltage values, but must correlate results back to these parameters.
TABLE 19: RESET TIMING PARAMETERS, VDD=3.0-3.6V (LPC MODE)
Symbol TPRST TRSTP TRSTF TRST1 TRSTE Parameter VDD stable to Reset High RST# Pulse Width RST# Low to Output Float RST# High to LFRAME# Low RST# Low to reset during Sector-/Block-Erase or Program 5 10 Min 100 100 48 Max Units s ns ns LCLK cycles s
T19.0 1307
1. There will be a latency due to TRSTE if a reset procedure is performed during a Program or Erase operation,
VDD
TPRST TRSTP TRSTE TRSTF TRST
Sector-/Block-Erase or Program operation aborted
RST#/INIT#
LAD[3:0]
LFRAME#
1307 F08.0
FIGURE 9: RESET TIMING DIAGRAM (LPC MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications TABLE 20: RESET TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE)
Symbol TPRST TRSTP TRSTF TRST
1
Parameter VDD stable to Reset Low RST# Pulse Width RST# Low to Output Float RST# High to Row Address Setup RST# Low to reset during Sector-/Block-Erase or Program RST# Low to reset during Chip-Erase
Min 1 100
Max
Units ms ns
48 1 10 50
ns s s s
T20.0 1307
TRSTE TRSTC
1. There will be a reset latency of TRSTE or TRSTC if a reset procedure is performed during a programming or erase operational.
VDD
TPRST
Addresses
Row Address
R/C#
RST#
TRSTP
TRSTE Sector-/Block-Erase or Program operation aborted Chip-Erase aborted
TRSTC TRSTF TRST
DQ7-0
1307 F09.0
FIGURE 10: RESET TIMING DIAGRAM (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
AC Characteristics (PP Mode)
TABLE 21: READ CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE)
Symbol TRC TRST TAS TAH TAA TOE TOLZ TOHZ TOH Parameter Read Cycle Time RST# High to Row Address Setup R/C# Address Set-up Time R/C# Address Hold Time Address Access Time Output Enable Access Time OE# Low to Active Output OE# High to High-Z Output Output Hold from Address Change 0 0 35 Min 270 1 45 45 120 60 Max Units ns s ns ns ns ns ns ns ns
T21.0 1307
TABLE 22: PROGRAM/ERASE CYCLE TIMING PARAMETERS, VDD=3.0-3.6V (PP MODE)
Symbol TRST TAS TAH TCWH TOES TOEH TOEP TOET TWP TWPH TDS TDH TIDA TBP TSE TBE TSCE Parameter RST# High to Row Address Setup R/C# Address Setup Time R/C# Address Hold Time R/C# to Write Enable High Time OE# High Setup Time OE# High Hold Time OE# to Data# Polling Delay OE# to Toggle Bit Delay WE# Pulse Width WE# Pulse Width High Data Setup Time Data Hold Time Software ID Access and Exit Time Byte Programming Time Sector-Erase Time Block-Erase Time Chip-Erase Time 100 100 50 5 150 20 25 25 100 Min 1 45 45 50 20 20 60 60 Max Units s ns ns ns ns ns ns ns ns ns ns ns ns s ms ms ms
T22.0 1307
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
RST# Addresses
TRST Row Address TAS TAH
TRC Column Address TAS TAH Row Address Column Address
R/C# WE# OE#
TOE TOLZ High-Z VIH TAA TOH TOHZ Data Valid High-Z
DQ7-0
1307 F10.0
FIGURE 11: READ CYCLE TIMING DIAGRAM (PP MODE)
TRST RST# Addresses Row Address TAS R/C# TCWH OE# WE# DQ7-0 TDH TDS Data Valid
1307 F11.0
Column Address TAS TAH TOEH TWPH
TAH
TOES
TWP
FIGURE 12: WRITE CYCLE TIMING DIAGRAM (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Addresses
Row
Column
R/C#
WE#
OE# TOEP DQ7 D D# D# D
1307 F12.0
FIGURE 13: DATA# POLLING TIMING DIAGRAM (PP MODE)
Addresses
Row
Column
R/C#
WE#
OE# TOET DQ6 D D
1307 F13.0
FIGURE 14: TOGGLE BIT TIMING DIAGRAM (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
A14-0 R/C# OE# WE# DQ7-0
5555
2AAA
5555
BA
Internal Program Starts AA BA = Byte-Program Address
1307 F14.0
55
A0
DATA
FIGURE 15: BYTE-PROGRAM TIMING DIAGRAM (PP MODE)
A14-0 R/C# OE# WE#
5555
2AAA
5555
5555
2AAA
SAX
Internal Erase Starts DQ7-0 AA SAX = Sector Address 55 80 AA 55 30
1307 F15.0
FIGURE 16: SECTOR-ERASE TIMING DIAGRAM (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
A14-0 R/C# OE# WE#
5555
2AAA
5555
5555
2AAA
BAX
Internal Erase Starts DQ7-0 AA BAX = Block Address 55 80 AA 55 50
1307 F16.0
FIGURE 17: BLOCK-ERASE TIMING DIAGRAM (PP MODE)
A14-0 R/C# OE# WE#
5555
2AAA
5555
5555
2AAA
5555
Internal Erase Starts DQ7-0 AA 55 80 AA 55 10
1307 F17.0
FIGURE 18: CHIP-ERASE TIMING DIAGRAM (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Three-byte sequence for Software ID Entry
A14-0 R/C# OE#
5555
2AAA
5555
0000
0001
TWP WE# DQ7-0 TWPH AA 55 90 TIDA TAA BF Device ID
1307 F18.0
Device ID = 60H for SST49LF004B
FIGURE 19: SOFTWARE ID ENTRY AND READ (PP MODE)
A14-0 R/C# OE# WE# DQ7-0
5555
2AAA
5555
TIDA
AA
55
F0
1307 F19.0
FIGURE 20: SOFTWARE ID EXIT (PP MODE)
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
1307 F20.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <5 ns.
Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 21: AC INPUT/OUTPUT REFERENCE WAVEFORMS
TO TESTER
TO DUT CL
1307 F21.0
FIGURE 22: A TEST LOAD EXAMPLE
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
PRODUCT ORDERING INFORMATION
Device Speed Suffix1 XX Suffix2 XXX Environmental Attribute E1 = non-Pb Package Modifier H = 32 leads Package Type N = PLCC W = TSOP (type 1, die up, 8mm x 14mm) Operating Temperature C = Commercial = 0C to +85C Minimum Endurance 4 = 10,000 cycles Serial Access Clock Frequency 33 = 33 MHz Device Density 004 = 4 Mbit Voltage Range L = 3.0-3.6V Product Series 49 = LPC Firmware Memories
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant".
SST49LF004B - XXX
Valid combinations for SST49LF004B SST49LF004B-33-4C-NHE SST49LF004B-33-4C-WHE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2006 Silicon Storage Technology, Inc.
S71307-02-000
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
Optional Pin #1 Identifier .048 .042 .495 .485 .453 .447
2 1 32
SIDE VIEW
.112 .106 .020 R. MAX. .029 x 30 .023 .040 R. .030
BOTTOM VIEW
.042 .048 .595 .553 .585 .547 .032 .026
.021 .013 .400 .530 BSC .490
.050 BSC .015 Min. .050 BSC .095 .075 .140 .125 .032 .026
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. 4. Coplanarity: 4 mils.
32-plcc-NH-3
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH
(c)2006 Silicon Storage Technology, Inc.
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4 Mbit Firmware Hub SST49LF004B
Preliminary Specifications
Pin # 1 Identifier
1.05 0.95 0.50 BSC
8.10 7.90
0.27 0.17
12.50 12.30 DETAIL 1.20 max. 0.70 0.50 14.20 13.80
0.15 0.05
0- 5 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 1mm 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 mm 4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
32-tsop-WH-7
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM SST PACKAGE CODE: WH TABLE 23: REVISION HISTORY
Number 00 01 02 Description Date Oct 2005 Jan 2006 Feb 2006
* * * *
Initial release Updated Surface Mount Solder Reflow Temperature information Added NH package information. Cosmetic update to Figure 2
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2006 Silicon Storage Technology, Inc. S71307-02-000 2/06
36

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